Memory devices and related method incorporating different biasing schemes

ABSTRACT

Memory devices comprise a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address lines can be adjacent (e.g., under) a first side of at least some cells of the plurality. A plurality of second (e.g., column) address lines extend across the plurality of row address lines, each column address line being adjacent (e.g., over) a second, opposing side of at least some of the cells. Control circuitry can be configured to selectively apply a read voltage or a write voltage substantially simultaneously to the address lines. Systems including such memory devices and methods of accessing a plurality of cells at least substantially simultaneously are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/702,330, filed May 1, 2015, pending, which is a continuation of U.S.patent application Ser. No. 13/430,970, filed Mar. 27, 2012, now U.S.Pat. No. 9,025,370, issued May 5, 2015, which is a divisional of U.S.patent application Ser. No. 12/489,605, filed Jun. 23, 2009, now U.S.Pat. No. 8,144,506, issued Mar. 27, 2012, the disclosure of each ofwhich is hereby incorporated herein in its entirety by this reference.

TECHNICAL FIELD

Embodiments of the present disclosure relate generally to non-volatilememory. More particularly, embodiments of the present disclosure aredirected to methods of reading and writing memory devices as well as tosuch memory devices.

BACKGROUND

Cross-point memories are memories that use intersecting address lines,such as row and column lines, with an intervening memory element.Examples of cross-point memories include magnetoresistive random accessmemory (MRAM), resistive random access memory (RRAM), ferroelectricrandom access memory (FRAM), silicon oxide nitride oxide semiconductormemory, polymer memory, and phase-change memory.

The memory element for conventional cross-point memories may beprogrammed by varying the voltage across the memory element (e.g.,phase-change memory), or by varying the polarity of the voltage acrossthe memory element (e.g., MRAM and some RRAM).

RRAM devices use resistive switching memory elements as an electronicmemory. One type of RRAM memory element utilizes a material that may be,in one application, electrically switched between a first resistivevalue and a second resistive value based on the polarity of a currentthrough the memory element. For example, a current pulsed though thememory element in a first polarity may cause the memory element tocomprise a first resistive value representing a 1, while a currentpulsed through the same memory element in a second, opposite polaritymay cause the memory element to comprise a second resistive valuerepresenting a 0.

MRAM devices store information as an orientation of a magnetization. Onetype of MRAM memory element utilizes a magnetic tunnel junction (MJT).An MJT is typically formed from two ferromagnetic plates, each of whichis configured to hold a magnetic field, separated by a thin insulatinglayer. One of the two plates is typically a permanent magnet set to aparticular polarity, and the other plate is typically configured with amagnetic field that will change polarity to match that of an externalfield. A memory element may be written by passing a current throughwires placed just above and below the MTJ element. A current in onepolarity results in a magnetic field of the other plate in a particularpolarity, while a current in the opposite polarity results in a magneticfield of the other plate that is opposite to the particular polarity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a block diagram of a memory device according to someembodiments.

FIGS. 2A-2D illustrate a schematic depiction of at least one embodimentof at least a portion of a single plane in a memory array.

FIGS. 3A and 3B are a schematic depiction of at least one embodiment ofa portion of a single plane in a memory array.

FIG. 4 is a schematic of a computing system diagram showing at least onesemiconductor memory device containing at least one cross-point memorydevice according to at least one embodiment of the present disclosure.

FIG. 5 is a truth table showing the various possible voltages to amemory element and respective selection device, as well as the writtenvalue according to at least one embodiment.

DETAILED DESCRIPTION

The illustrations presented herein are, in at least some instances, notactual views of any particular cross-point memory device but are merelyidealized representations which are employed to describe the presentdisclosure. Additionally, elements common between figures may retain thesame numerical designation.

Various embodiments of the present disclosure are directed towardembodiments of a method for reading and writing to a plurality of memorycells at least substantially simultaneously. Referring to FIG. 1, across-point memory device 10 is depicted in accordance with at least oneembodiment of the present disclosure. The memory device 10 may includecross-point memory 100 comprising a plurality of address lines extendingin a first direction and a plurality of intersecting address lines(e.g., transverse). As used herein, first address lines extend in afirst direction (e.g., across the figure), and may be respectivelyillustrated and referred to herein as rows, or row address lines,extending across the page. Meanwhile, as used herein, second addresslines extend in a second direction (into and out of the figure), acrossthe first address lines, and may be respectively illustrated andreferred to herein as columns, or column address lines. Such terminologyis intended only to aid in describing embodiments of the presentdisclosure and is not intended to be limiting. For example, first (e.g.,row) address lines may be second (e.g., column) address lines, and viceversa, depending on the orientation of the memory array. Of course,varying numbers of address lines, including larger numbers or smallernumbers, may be provided according to various embodiments. Examples ofsuch devices are described in U.S. Publication No. 2006/0120136, nowU.S. Pat. No. 7,359,227, issued Apr. 15, 2008, as well as U.S. Pat. No.6,882,553, issued Apr. 19, 2005. While an embodiment of a cross-pointmemory implemented as an RRAM device is illustrated, any othercross-point memory may be used in other embodiments of the presentdisclosure. By way of example and not limitation, the cross-point memorymay be implemented as a MRAM, FRAM, PCRAM, or other memories that areknown to those of ordinary skill in the art in which the memory cellsmay be configured into a cross-point array.

As depicted in FIG. 1, pairs of adjacent, intersecting address linesdefine at least one cell between them (also referred to herein as a“memory cell”). Each cell, as shown in the magnified portion of FIG. 1,may include a memory element 110 and a selection device 120. In otherwords, according to one or more embodiments, a row address line (e.g.,Row 3 in FIGS. 2A-2D, 3A and 3B) is adjacent (e.g., extends under) atleast a portion of a first side of a cell, and a column address line(e.g., one of Col. 1B, 2B, 3B, or 4B in FIGS. 2A-3B) is adjacent (e.g.,extends over) at least a portion of a second, opposing side of the cell.

The plurality of address lines are coupled to control circuitryconfigured to read or write the plurality of cells. For example, in theembodiment of FIG. 1, each row address line is electrically coupled torow decode/enable circuitry 130 that is configured to provide arespective voltage (including, e.g., a reference voltage, such asground) to a plurality of row address lines in the array. Similarly,each column address line is electrically coupled to column decode/enablecircuitry 140 that is configured to provide similar respective voltagesto each column address line in the array. The memory device 10 furtherincludes an address buffer and signal generation circuit 150, a writedriver circuit 160, a read amplification circuit 170, a sense amplifier180 and a data input/output buffer 190. The data input/output buffer 190is configured to provide write data values to the write driver circuitry160. A plurality of row address lines may be selected by the rowdecode/enable circuitry 130, and the write driver circuitry 160 mayapply one or more reset pulses or set pulses to the plurality of columnaddress lines selected by the column decode/enable circuitry 140.Various configurations for applying the one or more reset pulses or setpulses to the plurality of column address lines to store the pluralityof data values in multiple memory cells are described in more detailbelow.

In at least some embodiments, the memory element 110 may comprise aresistive changing material suitable for non-volatile memory datastorage. The resistive changing material may be a material havingelectrical properties (e.g., resistance) that may be changed through theapplication of energy such as, for example, heat, light, voltagepotential, or electrical current. By way of example and not limitation,suitable resistive changing materials may include a phase-change orionic conducting chalcogenide material, a binary metal oxide material, aperovskite oxide material, a colossal magnetoresistive material, or apolymer material.

By way of further example and not limitation, a phase-changechalcogenide material may comprise doped or undoped Ge₂Sb₂Te₅ or Sb₂Te₃.An ionic conducting chalcogenide material may comprise Ag-doped GeSe orGeS. A binary metal oxide material may comprise HfO_(x), Nb₂O₅, Al₂O₃,WO_(x), Ta₂O₅, TiO_(x), ZrO_(x), Cu_(x)O or Ni_(x)O. A perovskite oxidematerial may comprise doped or undoped SrTiO₃, SrZrO₃, or BaTiO₃. Acolossal magnetoresistive material may comprise Pr_((1−x))Ca_(x)MnO₃(PCMO), La_((1−x))Ca_(x)MnO₃ (LCMO), or Ba_((1−x))Sr_(x)TiO₃. A polymermaterial may comprise Alq₃Ag, Cu-TCNQ, DDQ, TAPA, or a fluorescine-basedpolymer. One of ordinary skill in the art will recognize that othermaterials may be suitable. Thus, the scope of the present disclosure isnot limited to just these materials.

In at least some embodiments, the selection device 120 may comprise amaterial that does not change phase, but remains permanently amorphousand its current-voltage characteristics may remain at leastsubstantially the same throughout its operating life. By way of exampleand not limitation, the selection device 120 may comprise As—Te—I,TiAs(Se, Te)₂, Si—Te—As—Ge, Si—Te—As—Ge—P, Al—As—Te, Al—Ge—As—Te,Te₃₉As₃₆Si₁₇Ge₇P₁, although the scope of embodiments of the presentdisclosure is not limited to just these materials. In other embodiments,the selection device 120 may comprise a material that possesses bipolarrectification properties.

When an appropriate potential is applied between adjacent, intersectingaddress lines (e.g., Row 3 and Col. 4B in FIG. 2A), a selection device120 between the intersecting address lines turns on, allowing currentflow across a memory element 110. Thus, it may be understood that sharedaddress lines are utilized. Namely, address lines can be shared betweenan overlying cell and an underlying cell. For example, with reference toFIG. 2A, column address line Col. 1A is shared between overlying cellsincluding the memory element 110A and the selection device 120A andunderlying cells including the memory element 110E and the selectiondevice 120E. Similarly, the row address line Row 2 functions forselection of its overlying cells, including the memory elements110E-110H and the selection devices 120E-120H, as well as for selectionof its underlying cells, including the memory elements 110I-110L and theselection devices 1201-120L. As a result, considerable economies may beachieved in some embodiments of the present disclosure, in terms ofcost, size and speed.

In one or more embodiments, a voltage biasing system is used such thataddress lines can be shared. In particular, a read or write voltage maybe applied to one or more address lines. For example, referring to FIG.2A, a read or write voltage may be applied to a row address line, suchas Row 2. One or more columns may be selected by providing a referencevoltage, such as ground, on the appropriate column address lines. Forexample, column address lines Col. 1A and Col. 3A, located above Row 2,and Col. 1B and Col. 2B, located below Row 2, may be grounded (e.g., bybiasing those lines to 0V). Similarly, a read or write voltage may beapplied to a column address line, such as column address lines Col. 4A,Col. 3B and Col. 4B, while a row address line, such as row address linesRow 1 and Row 3, are grounded. In such an embodiment, cells made up ofthe selection devices 120D, 120E, 120G, 120I, 120J, 120O and 120P andthe memory elements 110D, 110E, 110G, 110I, 110J, 110O and 110P will beselected for reading or writing thereto.

In embodiments in which the memory element is a non-volatile, bipolarswitching material (e.g., a conventional bipolar binary oxide), thememory element may be programmed into one of at least two memory statesby applying an electrical signal to the memory material, the electricalsignal having one of two opposing polarities referred to herein aspositive or negative. A positive or negative electrical signal maychange the resistance of the memory material between a relatively highresistance state and a relatively low resistance state. Programming ofthe memory element to change the resistance of the material may beaccomplished by applying different voltages to respective crossingaddress lines, thereby generating a voltage potential across the memorymaterial in a particular polarity.

The information stored in the memory elements 110 may be read bymeasuring the resistance of the memory material. As an example, a readcurrent may be provided to the memory material using crossing addresslines, such as Row 1 and Col. 1A, and a resulting read voltage acrossthe memory material may be compared against a reference voltage using,for example, a sense amplifier (not shown). The read voltage may beproportional to the resistance exhibited by the memory material.

In a low-voltage or low-field regime, the selection device 120 is offand may exhibit very high resistance in some embodiments. The offresistance can, for example, range from 50,000 ohms to greater than 10gigaohms at a bias of half the threshold voltage. The selection devices120 may remain in the off state until a threshold voltage or thresholdcurrent switches the selection device 120 to a highly conductive, lowresistance on state. The voltage across the selection device 120 afterit is turned on may drop to a slightly lower voltage, called the holdingvoltage and may remain very close to this holding voltage. By way ofexample and not limitation, the threshold voltage may be on the order ofabout 1.1 volts and the holding voltage may be on the order of about 0.9volt.

In the on state, the selection device 120 voltage drop remains close tothe holding voltage as the current passing through the device isincreased up to a certain, relatively high, current level. Above thatcurrent level the device remains on but displays a finite differentialresistance with the voltage drop increasing with increasing current. Theselection device 120 may remain on until the current through theselection device 120 is dropped below a characteristic holding currentvalue that is dependent on the area of the material and may be impactedby top and bottom electrodes utilized to form the selection device 120.

In at least some embodiments, the memory elements 110 may be configuredto store a 1 when a voltage across a respective memory element 110 andselection device 120 is positive voltage V_(o), and to store a 0 whenthe voltage across a respective memory element 110 and selection device120 is a negative voltage −V_(o). As used herein, voltage V_(o)comprises a voltage sufficient to switch the selection device 120 to theon state and to change the resistance of the memory element 110. In eachof the embodiments shown in FIGS. 2A-3B, and by way of example and notlimitation, the memory elements 110 and selection devices 120 areconfigured such that a positive voltage V_(o) alters the memory element110 to a high resistance, while a negative voltage −V_(o) alters thememory element 110 to a low resistance. Furthermore, the embodimentsdescribed herein with reference to FIGS. 2A-3B also illustrate, by wayof example and not limitation, embodiments wherein the voltage appliedis considered positive when the upper conductor of a respective memoryelement 110 and section device 120 (as oriented in the FIGS.) is ahigher voltage than the lower conductor, and negative when the lowerconductor is a higher voltage than the upper conductor.

FIG. 5 is a truth table showing the various possible voltages to amemory element 110 and respective selection device 120, as well as theresulting change, if any, to the memory element 110. As shown, when avoltage of 0V is applied to both the upper conductor (referred to as“top” in FIG. 5) and the lower conductor (referred to as “bottom” inFIG. 5), the voltage from top to bottom is 0V and nothing is written tothe respective memory element 110. When the voltage at the upperconductor is 0V and the voltage at the lower conductor is ½V_(o), thevoltage from top to bottom is −½ V_(o) and nothing is written to therespective memory element 110. When the voltage is 0V at the upperconductor and a voltage V_(o) is applied to the lower conductor, theresulting voltage from top to bottom is −V_(o), resulting in a 0 beingwritten to the respective memory element 110. When a voltage of ½V_(o)is applied to the upper conductor, nothing is written to the respectivememory element 110, since a voltage of 0V on the lower conductor resultsin ½V_(o) from top to bottom, a voltage of ½V_(o) on the lower conductorresults in 0V from top to bottom, and a voltage of V_(o) on the lowerconductor results in −½V_(o) from top to bottom. When the voltage at theupper conductor is V_(o) and a voltage of 0V is applied to the lowerconductor, the resulting voltage from top to bottom is V_(o), resultingin a 1 being written to the respective memory element 110. In theremaining two cases, when a voltage of V_(o) is applied to the upperconductor, a voltage of ½V_(o) on the lower conductor results in ½V_(o)from top to bottom and a voltage of V_(o) on the lower conductor resultsin 0V from top to bottom, both cases resulting in nothing being writtento the respective memory element 110.

For example, a 1 may be written to each memory element 110I and 110J inthe embodiment illustrated in FIG. 2A when the row address line Row 2 isbiased at voltage V_(o) and the column address lines Col. 1B and Col. 2Bare grounded. Similarly, a 1 may be written to each memory element 110Oand 110P when the row address line Row 3 is grounded and the columnaddress lines Col. 3B and Col. 4B are biased at voltage V_(o).

Furthermore, the memory elements 110 may be configured to store a 0 whena voltage across a respective memory element and selection device is−V_(o). For example, row address line Row 1 or Row 3, or both, may begrounded. One or more columns may be selected by applying a voltageV_(o) to the appropriate column address line. For example, a voltageV_(o) may be applied to the column address lines Col. 1A, Col. 3A andCol. 4A. In such an embodiment, cells made up of the selection devices120D, 120E and 120G and the memory elements 110D, 110E and 110G will beselected with a −V_(o), resulting in a 0 being written to each memoryelement 110D, 110E and 110G.

At the same time, unselected address lines, such as the column addressline Col. 2A, may be biased at a voltage less than the read or writevoltage and greater than the reference voltage. By way of example andnot limitation, unselected address lines may be biased at half the writevoltage (i.e., one-half V_(o)) such that the potential across cells ofthe unselected address lines (e.g., selection devices 120B and 120F andmemory elements 110B and 110F in FIG. 2A) is a positive or negativeone-half V_(o). In this manner, the potential across unselected cells iseither zero (e.g., in the case of selection devices 120A, 120C, 120H,etc., and memory elements 110A, 110C, 110H, etc., in FIG. 2A) orpositive or negative one-half V_(o) (e.g., in the case of selectiondevices 120B and 120F and memory elements 110B and 110F in FIG. 2A). Theselection devices may be configured such that the half voltage isinsufficient to turn on the selection devices 120 resulting in nocurrent flow or relatively low current flow across a cell, the memoryelements 110 may be configured such that the half voltage isinsufficient to change the resistance of the memory element, or acombination thereof.

This configuration allows for multiple memory elements 110 to be writtento or read at least substantially simultaneously. In some embodiments,at least a quarter of a page may be written in a single clock cycle. Insome embodiments, a word may be written in no more than two clockcycles. Thus, as will be seen, a reduction in clock cycles and,therefore, time for writing or reading memory elements 110 is provided.FIG. 2A is a schematic depiction of at least one embodiment of at leasta portion of a single plane in a memory array. As used herein, a “singleplane” in the memory array includes each of the first address linesextending parallel to each other and located in a common vertical planeof the memory array. For example, in the embodiment set forth in FIG. 2Awith the row address lines Row 1 and Row 3 grounded, and a write voltageV_(o) applied to row address line Row 2, one or more of column addresslines Col. 1A through Col. 4B may be selected and pulsed simultaneouslywith voltages of 0V or V_(o) to write a 1 or 0 value to at least some ofthe memory elements 110, as described herein above. Thus, in the exampleshown in FIG. 2A, a total of 7 bits are written in a single clock cycle.

FIG. 2B illustrates the cross-point memory 100 of FIG. 2A after thememory elements 110 described above have been written. Subsequent towriting the memory elements 110 described above, it may be desired towrite to memory elements 110 on the opposing side of at least some ofthe address lines. For example, it may be desired to write a 1 to memoryelement 110L, as well as to write a 0 to memory elements 110A and 110H.Thus, as shown in FIG. 2B, a voltage V_(o) may be applied to the columnaddress line Col. 1A, and the column address lines Col. 4A and Col. 4Bmay be grounded. In order to protect the remaining memory elements 110,a voltage of one-half V_(o) may be applied to column address lines Col.2A, Col. 3A, Col. 1B, Col. 2B and Col. 3B.

FIG. 2C illustrates the cross-point memory 100 of FIGS. 2A and 2B afterthe memory elements 110 have been written as described with reference toFIG. 2B. In FIG. 2C, subsequent to writing the memory elements 110described above with reference to FIGS. 2A and 2B, the row address linesRow 1-Row 3 may have opposite voltages applied thereto. As illustrated,row address lines Row 1 and Row 3may have voltage V_(o) applied thereto,while row address line Row 2 may be grounded. The voltage levels appliedto column address lines Col. 1A through Col. 4B depends on the desiredvalue written to the memory elements 110 not yet containing a value. Byway of example and not limitation, a value of 1 might be desired to bewritten to memory elements 110B and 110C, and a value of 0 might bedesired to be written to memory element 110M, 110N and 110K. In such acase, as shown in FIG. 2C, a voltage V_(o) may be applied to the columnaddress line Col. 3B and column address lines Col. 2A, Col. 3A, Col. 1Band Col. 2B may be grounded. In order to protect the remaining memoryelements 110, a voltage of one-half V_(o) may be applied to columnaddress lines Col. 1A, Col. 4A and Col. 4B.

To complete the page illustrated in FIGS. 2A-2D, the last remainingmemory element 110F may have a 1 written thereto, for example. In such acase, as illustrated in FIG. 2D, a voltage V_(o) may be applied tocolumn address line Col. 2A while a voltage of one-half V_(o) may beapplied to all the remaining column address lines Col. 1A, Col. 3A, Col.4A, Col. 1B, Col. 2B, Col. 3B and Col. 4B in order to protect theassociated memory elements 110. In such a manner, the entire pageillustrated in FIGS. 2A-2D may be written to in just a few clock cycles.

In at least one other embodiment, a cross-point memory 100 may beconfigured to read/write a full word in only two clock cycles. By way ofexample and not limitation, FIG. 3A illustrates an embodimentcross-point memory 100 configured to read/write a word comprising 8bits. As illustrated, row address line Row 2 may have a voltage V_(o)applied thereto while row address lines Row 1 and Row 3 may have avoltage one-half V_(o) applied thereto. If, for example, an eight-bitword comprises 00100110, a first plurality of data may be written atleast substantially simultaneously and a second, remaining plurality ofdata may be written at least substantially simultaneously. By way ofexample and not limitation, with a voltage V_(o) applied to row addressline Row 2, column address line Col. 1A, Col. 2A, Col. 4A, Col. 2B andCol. 3B may be grounded. Upon pulsing the voltage values to the columnaddress lines, each of memory elements 110J and 110K will have a valueof 1 written thereto and each of memory elements 110E, 110F and 110Hwill have a 0 written thereto. Each of the remaining column addresslines Col. 3A, Col. 1B and Col. 4B may have either a voltage V_(o)applied thereto or a voltage one-half V_(o) applied thereto to protecttheir corresponding memory elements 110 from being enabled.

FIG. 3B illustrates the cross-point memory 100 of FIG. 3A subsequent towriting the first plurality of data as described above. Row address lineRow 2 may be grounded while the one-half V_(o) voltage is still appliedto row address lines Row 1 and Row 3. To write a value of 1 to memoryelement 110G and a 0 value to memory elements 110I and 110L, a voltageV_(o) is applied to column address lines Col. 3A, Col. 1B and Col. 4B.Each of the remaining column address lines Col. 1A, Col. 2A, Col. 4A,Col. 2B and Col. 3B may either be grounded or have a voltage of one-halfV_(o) applied thereto to protect their corresponding memory elements 110from being enabled.

The example provided herein with reference to FIGS. 3A and 3B describethe column address lines being pulsed to write to respective memoryelements 110. However, this is not intended to be limiting. Indeed, inother embodiments, the row address lines may be pulsed after aparticular voltage is applied to the respective column address lines.Thus, for example, in the embodiment described in FIGS. 3A and 3B, therespective voltages may be applied to each of the column address lines.A voltage V_(o) may be pulsed on row address line Row 2 followed bygrounding the same row address line Row 2. In such an embodiment, it maynot be necessary to change the voltages applied to the column addresslines.

As described, an 8-bit word may be written to a plurality of memoryelements 110 in just a couple of clock cycles and in close proximity inthe cross-point memory array. Furthermore, as will be apparent to thoseof ordinary skill in the art, by providing a memory array with a greaternumber of cells comprising a selection device 120 and a memory element110, a system employing larger word sizes (e.g., 16 bit, 32 bit, etc.)may similarly be written such that at least one word may be read/writtenin a minimum number of clock cycles.

Still additional embodiments of the present disclosure are directed toelectronic systems comprising cross-point memory devices. As shown inFIG. 4, an electronic system 400, such as a computer system, inaccordance with an embodiment of the present disclosure, comprises atleast one input device 410, at least one output device 420, at least onememory access device, such as processor 430, and at least one memorydevice 440. As used herein, the term “computer system” includes not onlycomputers, such as personal computers and servers, but also wirelesscommunications devices (e.g., cell phones, personal digital assistantsconfigured for text messaging and email), cameras, chip sets, set topboxes, controllers, vehicle and engine control and sensor systems,digital music players, and other combinations of the above-referencedinput, output, processor and memory devices. The at least one memorydevice 440 comprises at least one cross-point memory device (e.g.,device 100) comprising a plurality of memory cells having a memoryelement coupled to a selection device.

CONCLUSION

Various embodiments of the present disclosure are described above andcomprise methods for at least substantially simultaneously accessing aplurality of cross-point memory cells. In one or more embodiments, suchmethods may comprise biasing a plurality of first address lines andbiasing a plurality of second address lines. Each first address line ofthe plurality may be adjacent a first side of some of a plurality ofcells in a single plane of a three-dimensional array of cells. Each cellmay comprise a memory element and a selection device. The plurality ofsecond address lines may extend across the plurality of first addresslines. Each second address line may extend over a second, opposing sideof at least one cell of the plurality of cells in the single plane ofthe three-dimensional array of cells such that a plurality of cells inthe single plane of the array of cells are accessed at leastsubstantially simultaneously and at least one cell of the plurality ofcells in the single plane is not accessed.

In other embodiments, methods of storing a plurality of data values intoa selected portion of memory cells in a common plane of athree-dimensional memory array may comprise biasing at least one firstaddress line extending in first direction. At least one side of each ofa plurality of cells in the common plane may be adjacent to at least oneof the first address lines, each cell comprising a memory element and aselection device. A plurality of second address lines extending acrossthe at least one first address line may be biased. Each second addressline may be adjacent a side of a cell of the plurality of cells oppositethe side of the cell adjacent to a respective one of the at least onefirst address lines. At least some of the plurality of data values maybe stored at least substantially simultaneously in at least some of theplurality of cells.

In still other embodiments, methods of at least substantiallysimultaneously writing to a plurality of memory cells may compriseselectively applying a reference voltage to at least one first addressline in a plane. Each of the at least one first address lines may beadjacent to a first side of some of a plurality of cells comprising amemory element and a selection device. A write voltage or a voltage lessthan the write voltage and greater than the reference voltage may beselectively applied to at least one other first address line located inthe plane and adjacent to the at least one first address line. The writevoltage or the reference voltage may be selectively applied to aplurality of second address lines extending across the at least onefirst address line. Each second address line of the plurality of secondaddress lines may be adjacent to a second, opposing side of a respectivecell of the plurality of cells.

In other embodiments a memory device may comprise a plurality of cells,each cell comprising a memory element and a selection device. Aplurality of first address lines may be adjacent a first side of atleast some cells of the plurality of cells. A plurality of secondaddress lines may extend across to the plurality of first address lines,and each second address line may be adjacent a second, opposing side ofat least some cells of the plurality of cells. Control circuitry may beconfigured to selectively apply a write voltage or a reference voltageat least substantially simultaneously to the plurality of first addresslines and to selectively apply a write voltage, a reference voltage, ora voltage less than the write voltage and greater than the referencevoltage at least substantially simultaneously to the plurality of secondaddress lines.

In still other embodiments, an electronic system may comprise a memoryaccess device and a memory device coupled thereto. The memory device maycomprise a plurality of memory cells in a common plane. Each memory cellmay comprise a memory element coupled to a selection device. A firstaddress line of a plurality of first address lines may be adjacent afirst side of at least some cells of the plurality of cells. A pluralityof second address lines may extend across the plurality of first addresslines. Each second address line may be adjacent a second, opposing sideof at least some cells of the plurality of cells. A first decode/enablecircuitry may be configured to selectively apply a write voltage or areference voltage to the first address lines. A second decode/enablecircuitry may be configured to selectively apply a write voltage, areference voltage, or a voltage less than the write voltage and greaterthan the reference voltage to at least some of the plurality of secondaddress lines such that at least some of the plurality of memory cellsare accessed at least substantially simultaneously.

Although the embodiments described herein are directed to cross-pointmemories configured for bipolar switching (e.g., RRAM, MRAM), othermemory may be configured for monopolar switching (e.g., PCRAM). In suchembodiments, the biasing schemes described above may need to be modifiedslightly to protect specific cells. For example, in some monopolarswitching embodiments, the value written to a memory cell may depend onthe magnitude of the voltage, the length of the pulse, or both throughthe memory cell. Accordingly, in at least some monopolar embodiments,the memory material may be adapted to be altered such that it can be inany particular one of a number of resistance states so as to providedigital or analog storage of information. In any of the various bipolaror monopolar embodiments, it will be apparent to one of ordinary skillin the art that a plurality of cells may be simultaneously accessed byproperly biasing the plurality of row address lines and the plurality ofcolumn address lines, similar to the manner described herein.

Therefore, while certain embodiments have been described and shown inthe accompanying drawings, such embodiments are merely illustrative andnot restrictive of the scope of the invention, and this invention is notlimited to the specific constructions and arrangements shown anddescribed, since various other additions and modifications to, anddeletions from, the described embodiments will be apparent to one ofordinary skill in the art. Thus, the scope of the invention is onlylimited by the literal language, and legal equivalents, of the claimswhich follow.

What is claimed is:
 1. A semiconductor memory device including a memory array, comprising: address lines including a first row address line, a second row address line, and a third row address line; column address lines including a first column address line and a second column address line; a first memory cell coupled between the first column address line and the first row address line; a second memory cell coupled between the first column address line and the second row address line; a third memory cell coupled between the second column address line and the third row address line; a fourth memory cell coupled between the second column address line and the fourth row address line; and a voltage biasing system operably coupled with the row address lines and the column address lines, and configured to selectively apply voltages to the row address lines and the column address lines according to a bias scheme that causes either the first memory cell or the second memory cell to be accessed within a same clock cycle as either the third memory cell or the fourth memory cell.
 2. The semiconductor memory device of claim 1, wherein each memory cell is configured as at least one of a magnetoresistive random access memory (MRAM) cell, a resistive random access memory (RRAM) cell, a ferroelectric random access memory (FRAM) cell, or a phase change random access memory (PCRAM) cell.
 3. The semiconductor memory device of claim 1, wherein each memory cell includes a memory element and a selection device.
 4. The semiconductor memory device of claim 3, wherein the memory element includes a resistive changing material selected from the group consisting of a phase-change conducting chalcogenide material, an ionic conducting chalcogenide material, a binary metal oxide material, a perovskite oxide material, a colossal magnetoresistive material, and a polymer material.
 5. The semiconductor memory device of claim 4, wherein: the phase-change conducting chalcogenide material includes at least one of doped or undoped Ge₂Sb₂Te₅ or Sb₂Te₃; the ionic conducting chalcogenide material includes at least one of Ag-doped GeSe or GeS; the binary metal oxide material includes at least HfO_(x), Nb₂O₅, Al₂O₃, WO_(x), Ta₂O₅, TiO_(x), ZrO_(x), Cu_(x)O or Ni_(x)O; the perovskite oxide material at least one of doped or undoped SrTiO₃, SrZrO₃, or BaTiO₃; the colossal magnetoresistive material includes at least one of Pr_((1−x))Ca_(x)MnO₃ (PCMO), La_((1−x))Ca_(x)MnO₃ (LCMO), or Ba_((1−x))Sr_(x)TiO₃; and the polymer material includes at least one of Alq₃Ag, Cu-TCNQ, DDQ, TAPA, or a fluorescin-based polymer.
 6. The semiconductor memory device of claim 3, wherein the selection device includes an amorphous material exhibiting current-voltage characteristics that are substantially the same throughout its operating life.
 7. The semiconductor memory device of claim 6, wherein the amorphous material includes at least one of As—Te—I, TiAs(Se, Te)₂, Si—Te—As—Ge, Si—Te—As—Ge—P, Al—As—Te, Al—Ge—As—Te, or Te₃₉As₃₆Si₁₇Ge₇P₁.
 8. A semiconductor memory device including a memory array, comprising: a first row address line, a second row address line, and a third row address line extending in a first direction; a first set of column address lines located between the first row address line and the second row address line, and extending in a second direction transverse to the first direction; a second set of column address lines located between the second row address line and the third row address line, and extending parallel in the second direction; a page of memory cells including: a first word of memory cells located in a first plane between the first row address line and the first set of column address lines; a second word of memory cells located in a second plane between the first set of column address lines and the second row address line; a third word of memory cells located in a third plane between the second row address line and the second set of column address lines; and a fourth word of memory cells located in a fourth plane between the second set of column address lines and the third row address line; and a voltage biasing system operably coupled to the row address lines and the column access lines, and configured to access at least one memory cell from the first word or the second word within a same clock cycle as at least one memory cell from either the third word or the fourth word.
 9. The semiconductor memory device of claim 8, wherein the voltage biasing system is further configured to access at least a quarter of the page within a single clock cycle.
 10. The semiconductor memory device of claim 8, wherein the voltage biasing system is further configured to access at least an entire word within two clock cycles.
 11. The semiconductor memory device of claim 8, wherein the voltage biasing system is further configured to access the entire page within four clock cycles.
 12. A method of operating a semiconductor memory device comprising a three-dimensional memory array, the method comprising: accessing at least one memory cell from a first word of memory cells or a second word of memory cells of a page of memory cells, the first word of memory cells located in a first plane between a first row address line and a first set of column address lines, the second word of memory cells located in a second plane between the first set of column address lines and a second row address line; and accessing at least one additional memory cell from a third word of memory cells or a fourth word of memory cells of the page of memory cells during a first clock cycle as accessing the at least one memory cell, the third word of memory cells located in a third plane between the second row address line and a second set of column address lines, and the fourth word of memory cells located in a fourth plane between the second set of column address lines and a third row address line, wherein: the first row address line, the second row address line, and the third row address line extend in a first direction; the first set of column address lines is located between the first row address line and the second row address line, and extend in a second direction transverse to the first direction; and the second set of column address lines are located between the second row address line and the third row address line, and extend in the second direction.
 13. The method of claim 12, wherein accessing includes applying different voltages to the first row address line, the second row address line, the third row address line, the first set of column address lines, and the second set of column address lines to access at least a quarter of the page within a single clock cycle.
 14. The method of claim 12, wherein accessing includes applying different voltages to the first row address line, the second row address line, the third row address line, the first set of column address lines, and the second set of column address lines to access at least an entire word within two clock cycles.
 15. The method of claim 12, wherein accessing includes applying different voltages to the first row address line, the second row address line, the third row address line, the first set of column address lines, and the second set of column address lines to access the entire page within four clock cycles.
 16. The method of claim 12, wherein accessing includes applying different voltages to the first row address line, the second row address line, the third row address line, the first set of column address lines, and the second set of column address lines by at least one of pulsing the first set and second set of column address lines or pulsing the row address lines to write to the respective memory cells.
 17. The method of claim 12, wherein accessing includes: applying a reference voltage to the first row address line; applying a write voltage to the second row address line; applying the reference voltage to the third row address line; and applying a combination of either the write voltage, the reference voltage, or an intermediate voltage to the different column address lines of the first and second set of column address lines during the first clock cycle, wherein the intermediate voltage is a voltage between the write voltage and the reference voltage.
 18. The method of claim 17, further comprising accessing additional memory cells by: applying the write voltage to the first row address line; applying the reference voltage to the second row address line; applying the write voltage to the third row address line; and applying a combination of either the write voltage, the reference voltage, or the intermediate voltage to the different column address lines of the first and second set of column address lines during a second clock cycle.
 19. The method of claim 12, wherein accessing includes: applying an intermediate voltage to the first row address line; applying a reference voltage to the second row address line; applying the intermediate voltage to the third row address line; and applying a combination of either the write voltage, the reference voltage, or an intermediate voltage to the different column address lines of the first and second set of column address lines during the first clock cycle, wherein the intermediate voltage is a voltage between the write voltage and the reference voltage.
 20. The method of claim 19, further comprising accessing additional memory cells by: applying the reference voltage to the first row address line; applying the intermediate voltage to the second row address line; applying the reference voltage to the third row address line; and applying a combination of either the write voltage, the reference voltage, or the intermediate voltage to the different column address lines of the first and second set of column address lines during a second clock cycle. 